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Creep curve of silicon wafers

Appl. Phys. Lett. 30, 564 (1977); doi:10.1063/1.89261

Issue Date: 1 June 1977

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S. Isomae, M. Nanba, Y. Tamaki, and M. Maki
Central Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo 185, Japan
A new method of performing a creep test on silicon single crystals is described. The experiment utilizes silicon wafers. The stress applied to the wafers is provided by a Si3N4 film deposited by chemical vapor deposition on the front side of the wafer. The samples, i.e., silicon wafers with superposed Si3N4 films, are annealed in a quartz tube at 1000–1100 °C. The creep curves obtained are classified into two types according to stress. One type is related to plastic deformation of the wafer; the other is an elastic deformation. These results are available for the use of Si3N4 film in semiconductor technology. Applied Physics Letters is copyrighted by The American Institute of Physics.
Permalink: http://link.aip.org/link/?APPLAB/30/564/1
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PACS

  • 62.20.Hg
    Mechanical and acoustical properties of condensed matter Mechanical properties of solids (related to microscopic structure) Creep
  • 61.70.Le
    Structure of liquids and solids; crystallography Defects in crystals Slip, creep, internal friction, and other indirect evidence of dislocations
  • 77.55.+f
    Dielectric properties and materials Dielectric thin films
  • 46.30.Jv
    Mechanics, elasticity, rheology Mechanics of solids and rheology Viscoelasticity, plasticity, viscoplasticity, creep, and stress relaxation (including rheology of solids)
  • YEAR: 1977

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (9)
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  1. See, for example, B. Reppich, P. Haasen, and B. Ilschner, Acta Metall. 12, 1283 (1964).
  2. See, for example, K. Berner and H. Alexander, Acta Metall. 15, 933 (1967).
  3. R. J. Jaccodine and W. A. Schlegel, J. Appl. Phys. 37, 2429 (1966).
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  5. W. A. Westdorp and G. H. Schwuttke, Thin Film Dielectrics (Electrochemical Society, New York, 1969), p. 546.
  6. E. A. Irene, J. Electron. Mater. 5, 287 (1976).
  7. T. Tokuyama, Y. Fujii, Y. Sugita, and S. Kishino, Jpn. J. Appl. Phys. 6, 1252 (1967).
  8. A. R. Chaudhuri, J. R. Patel, and L. G. Rubin, J. Appl. Phys. 33, 2736 (1962).
  9. L. V. Gregor, Thin Film Dielectrics (Electrochemical Society, New York, 1969), p. 447.

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