Picosecond nonequilibrium carrier transport in GaAs
Appl. Phys. Lett. 38, 104 (1981); doi:10.1063/1.92258
Issue Date: 15 January 1981
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We report a new picosecond optical technique for observation of nonequilibrium carrier transport. An ''overshoot'' electron velocity of 4.4×107 cm/sec is observed at short times in GaAs under appropriate electric field conditions.
Applied Physics Letters is copyrighted by The American Institute of Physics.
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KEYWORDS and PACS
SEMICONDUCTOR MATERIALS,
CHARGE CARRIERS,
CARRIER MOBILITY,
GALLIUM ARSENIDES,
DATA,
ELECTRONS,
VELOCITY,
ELECTRIC FIELDS
- 72.20.Fr
Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators Low-field transport and mobility; piezoresistance - YEAR: 1981
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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