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The power gain of a dc superconducting quantum interference device (SQUID) amplifier, with tuned input and output circuits, is computed as a function of the current and magnetic biases. A gain of 2030...
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Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers
High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrod...

Josephson properties of Nb3Ge/oxide/Pb tunnel junctions

Appl. Phys. Lett. 44, 559 (1984); doi:10.1063/1.94802

Issue Date: 1 March 1984

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K. Tanabe, H. Asano, and O. Michikami
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki 319-11, Japan
Nb3Ge/oxide/Pb Josephson tunnel junctions have been fabricated on magnetron-sputtered Nb3Ge thin films using standard photolithography and a CF4 plasma cleaning technique. Their Josephson properties have also been investigated. High-quality junctions with a well-defined large gap (~5 mV) and low excess conductance (Vm=35 mV) can be obtained by adopting large-grained high-Tc films. These junctions are found to have an Nb3Ge magnetic penetration depth of less than 200 nm, and a specific capacitance a little lower than that for Nb/Nb oxide/Pb junctions. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 28 November 1983; accepted 19 December 1983
Permalink: http://link.aip.org/link/?APPLAB/44/559/1
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KEYWORDS and PACS

Keywords
PACS
  • 74.50.+r
    Superconductivity Proximity effects, tunnelling phenomena, and Josephson effects
  • 85.25.+k
    Electrical and magnetic devices Superconducting devices; superconducting magnets
  • 73.60.Ka
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic properties of thin films Superconducting films
  • YEAR: 1984

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (12)
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