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Ballistic peaks in the distribution function from intervalley transfer in a submicron structure
Appl. Phys. Lett. 51, 1708 (1987); doi:10.1063/1.98551
Issue Date: 23 November 1987
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Using Monte Carlo simulation, we show that ballistic electrons coupled with intervalley scattering produce peaks in the distribution function of electrons in submicron structures. The distribution functions f(v,x) and f(
,x) for a submicron N+-N−-N+ GaAs structure indicate that ballistic electrons cause both the dominant peak in f(v,x) throughout the N− region and additional peaks in f(,x) following transfer from the L valley to the 
valley. For low densities and low temperatures (T=77), both ballistic peaks in f(,x) split into several sharp peaks separated in energy by the optic-phonon energy.
Applied Physics Letters is copyrighted by The American Institute of Physics.
,x) for a submicron N+-N−-N+ GaAs structure indicate that ballistic electrons cause both the dominant peak in f(v,x) throughout the N− region and additional peaks in f(,x) following transfer from the L valley to the valley. For low densities and low temperatures (T=77), both ballistic peaks in f(,x) split into several sharp peaks separated in energy by the optic-phonon energy.
Applied Physics Letters is copyrighted by The American Institute of Physics.
| History: | Received 29 June 1987; accepted 22 September 1987 |
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KEYWORDS and PACS
GALLIUM ARSENIDES,
MONTE CARLO METHOD,
SIMULATION,
SEMICONDUCTOR DEVICES,
CHARGED&minus,
PARTICLE TRANSPORT,
DISTRIBUTION FUNCTIONS
- 72.20.Ht
Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators High-field and nonlinear effects - 73.40.Kp
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic properties of interface structures III
V semiconductor-to-semiconductor contacts, pn junctions, and heterojunctions
- 85.30.De
Electrical and magnetic devices Semiconductor devices Semiconductor-device characterization and modeling - 73.60.Br
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic properties of specific thin films IIIV semiconductor films
- YEAR: 1987
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (17)
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Physica B 134, 55 (1985 ). We note that a small time step is needed (t = 2.5 fs) in order to allow the L-valley electrons to relax to equilibrium in the
valley in the right-hand N+ region and that our computed current is constant throughout the structure to within 0.5%.
- The distribution function at x0 is calculated by making a histogram of all particles which cross the plane x = x0. Because few electrons with small
x cross the plane in a fixed time, the statistical error is greatest for x near 0. - M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, J. Appl. Phys. 48, 4587 (1977). Our parameters differ from those of Littlejohn et al. by less than 3% except for m
= 0.67,
= 0.55, L = 0.25, and x = 0.5. - D. Jones and H. D. Rees,
J. Phys. C 6, 1781 (1973 ).
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