Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs
Appl. Phys. Lett. 53, 162 (1988); doi:10.1063/1.100353
Issue Date: 11 July 1988
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Molecular beam epitaxy has been used to grow single-crystal Fe/Cr magnetic multilayer structures on homoepitaxial (001)GaAs layers. The epitaxial relationships between Fe, Cr, and GaAs were determined by in situ reflection high-energy electron diffraction. The sharpness of the different interfaces of the Fe/Cr multilayers is illustrated by Auger electron spectroscopy sputter depth profiling, which shows that no significant intermixing occurs in the investigated growth temperature range −50 to +50 °C.
Applied Physics Letters is copyrighted by The American Institute of Physics.
| History: | Received 8 February 1988; accepted 5 May 1988 |
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KEYWORDS and PACS
MOLECULAR BEAM EPITAXY,
MULTILAYERS,
IRON,
CHROMIUM,
RHEED,
INTERFACE STRUCTURE,
DEPTH PROFILES,
GALLIUM ARSENIDES,
VAPOR DEPOSITED COATINGS,
FABRICATION,
AUGER ELECTRON SPECTROSCOPY
- 68.55.Bd
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin films: growth, structure, epitaxy, and nonelectronic properties Molecular and atomic beam epitaxy - 68.65.+g
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Layer structures, intercalation compounds, and superlattices: growth, structure, and nonelectronic properties - 68.35.Fx
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solid
solid interfaces (including bicrystals)
Diffusion; interface formation
- 75.70.-i
Magnetic properties and materials Magnetic films and multilayers - YEAR: 1988
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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