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Electron microdiffraction of faulted regions in Co-Cr and Co-Ni-Cr thin films

Appl. Phys. Lett. 55, 229 (1989); doi:10.1063/1.101915

Issue Date: 17 July 1989

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K. Hono, B. G. Demczyk, and D. E. Laughlin
Department of Metallurgical Engineering and Materials Science, Carnegie–Mellon University, Pittsburgh, Pennsylvania 15213
The planar defects which are commonly observed in deposited Co-Cr and Co-Ni-Cr magnetic thin films have been characterized by electron microdiffraction and trace analysis. It was unambiguously shown that these planar defects are (0001) stacking faults, which are thought to be formed to reduce the growth stress of the film during deposition. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 20 February 1989; accepted 11 May 1989
Permalink: http://link.aip.org/link/?APPLAB/55/229/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.Ln
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin films: growth, structure, epitaxy, and nonelectronic properties Defects and impurities: doping, implantation, distribution, concentration, etc.
  • 81.15.Cd
    Materials science Methods of deposition of films and coatings Deposition by sputtering
  • 68.55.Jk
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin films: growth, structure, epitaxy, and nonelectronic properties Structure and morphology; thickness
  • YEAR: 1988-89

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)

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  1. J. K. Howard, J. Vac. Sci. Technol. A 4, 1 (1986).
  2. A. H. Eltoukhy, J. Vac. Sci. Technol. A 4, 539 (1986).
  3. K. Ouchi and S. Iwasaki, IEEE Trans. Magn. MAG-18, 1110 (1982).
  4. K. Ouchi and S. Iwasaki, IEEE Trans. Magn. MAG-23, 2443 (1987).
  5. G.-L. Chen, IEEE Trans. Magn. MAG-22, 334 (1986).
  6. M. Ishikawa, N. Tani, T. Yamada, Y. Ota, K. Nakamura, and A. Itoh, IEEE Trans. Magn. MAG-22, 573 (1986).
  7. J.-W. Lee, B. G. Demczyk, K. R. Mountfield, and D. E. Laughlin, J. Appl. Phys. 61, 3813 (1987).
  8. J.-W. Lee, B. G. Demczyk, K. R. Mountfield, and D. E. Laughlin, J. Appl. Phys. 63, 2905 (1988).
  9. B. G. Demczyk, and D. E. Laughlin, Mater. Res. Soc. Symp. Proc. 119, 159 (1988).
  10. J.-W. Lee, K. R. Mountfield, and D. E. Laughlin, J. Appl. Phys. 63, 3266 (1988).
  11. A. Kelly and G. W. Groves, Crystallography and Crystal Defects (Longmans, Harlow, 1979), p. 290.
  12. D. W. Pashley and M. J. Stowell, Philos. Mag. 8, 1605 (1963).
  13. M. Futamoto, Y. Honda, H. Kakibayashi, T. Shimotsu, and Y. Uesaka, Jpn. J. Appl. Phys. 24, L406 (1985).
  14. P. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals (Butterworths, London, 1967), p. 165.
  15. T. Ohno, Y. Shiroishi, S. Hishiyama, H. Suzuki, and Y. Matsuda, IEEE Trans. Magn. MAG-2, 2809 (1987).
  16. P. G. Partridge, Metall. Rev. 12, 169 (1967).
  17. S. Mahajan, D. Brasen, and T. Wakiyama, Metall. Trans. A 9, 1817 (1978).

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