Critical steps in the molecular beam epitaxy of high quality Ag/Fe superlattices on (001) GaAs
Appl. Phys. Lett. 55, 2239 (1989); doi:10.1063/1.102069
Issue Date: 20 November 1989
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It is shown that high quality Ag/Fe superlattices can be grown on (001) GaAs by molecular beam epitaxy, provided that adequate intermediate layers are interposed between the GaAs substrate and the superlattice structure. In addition to the growth of a GaAs buffer layer, a sufficiently thick Fe nucleation layer is necessary for the further growth of a high quality Ag buffer layer showing clear reflection high-energy electron diffraction intensity oscillations. This growth sequence ensures the obtention of single-crystal Ag/Fe superlattices with well-defined interfaces.
Applied Physics Letters is copyrighted by The American Institute of Physics.
| History: | Received 10 July 1989; accepted 21 September 1989 |
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KEYWORDS and PACS
NUCLEATION,
SILVER,
IRON,
MOLECULAR BEAM EPITAXY,
FABRICATION,
SUPERLATTICES,
FILM GROWTH,
THIN FILMS,
THICKNESS,
GALLIUM ARSENIDES,
RHEED,
VAPOR DEPOSITED COATINGS
- 68.65.+g
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Layer structures, intercalation compounds, and superlattices: growth, structure, and nonelectronic properties - 68.55.Bd
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin films: growth, structure, epitaxy, and nonelectronic properties Molecular and atomic beam epitaxy - 68.35.Bs
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solid
solid interfaces (including bicrystals)
Geometry; atomic and molecular orientation; crystal shapes; surface topography
- 68.55.Jk
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin films: growth, structure, epitaxy, and nonelectronic properties Structure and morphology; thickness - YEAR: 1988-89
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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