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Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy

Appl. Phys. Lett. 61, 840 (1992); doi:10.1063/1.107762

Issue Date: 17 August 1992

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N. Katzenellenbogen and D. Grischkowsky
IBM Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 28 February 1992; accepted 2 June 1992
Permalink: http://link.aip.org/link/?APPLAB/61/840/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.80.Ey
    Electronic transport in condensed matter Conductivity of specific semiconductors and insulators IIIV and IIVI semiconductors
  • 72.30.+q
    Electronic transport in condensed matter High-frequency effects; plasma effects
  • YEAR: 1992

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (7)
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  2. S. Perkowitz, J. Phys. Chem. Solids 32, 2267 (1971).
  3. B. L. Bean and S. Perkowitz, J. Opt. Soc. Am. 67, 911 (1977).
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  5. D. Grischkowsky, S. Keiding, M. van Exter, and Ch. Fattinger, J. Opt. Soc. Am. B 7, 2006 (1990).
  6. N. Katzenellenbogen and D. Grischkowsky, Appl. Phys. Lett. 58, 222 (1991).
  7. D. Grischkowsky and N. Katzenellenbogen, in Proceedings of the Conference on Picosecond Electronics and Optoelectronics, edited by T. C. L. Gerhard Sollner and Jagdeep Shah (Optical Society of America, Washington, D.C., 1991), Vol. 9, pp. 9–14.

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