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Observation of quantum wire formation at intersecting quantum wells

Appl. Phys. Lett. 61, 1956 (1992); doi:10.1063/1.108375

Issue Date: 19 October 1992

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A. R. Goñi, L. N. Pfeiffer, K. W. West, A. Pinczuk, H. U. Baranger, and H. L. Stormer
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
We report the first observation of a quantum bound state formed at the junction of two intersecting quantum wells in the shape of a T. The atomically precise T junctions are fabricated by a novel cleaved edge overgrowth process in the AlGaAs/GaAs system. The identification of bound states with energies in excess of 20 meV is made by optical emission and absorption spectroscopy. Such quantum wire states are caused by the unique confinement of the lowest state wave function to the region of the T junction. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 22 May 1992; accepted 10 August 1992
Permalink: http://link.aip.org/link/?APPLAB/61/1956/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.65.Fa
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds) IIIV and IIVI inorganics
  • 73.20.Dx
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
  • YEAR: 1992

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0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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  1. For reviews see, Nanostructure Physics and Fabrication, edited by M. A. Reed and W. P. Kirk (Academic, New York, 1989);
  2. C. W. J. Beenakker and H. van Houten, in Solid State Physics: Advances in Research and Applications, edited by H. Ehrenreich and D. Turnbull (Academic, New York, 1991), Vol. 44, pp. 1–228.
  3. M. Tsuchiya, J. M. Gaines, R. H. Yan, R. J. Simes, P. O. Holtz, L. A. Coldren, and P. M. Petroff, Phys. Rev. Lett. 62, 466 (1989).
  4. R. Notzel, N. N. Ledentsov, L. Daweritz, K. Ploog, and M. Hohenstein, Phys. Rev. B 45, 3507 (1992).
  5. E. Kapon, D. M. Hwang, and R. Bhat, Phys. Rev. Lett. 63, 430 (1989).
  6. K. Kash, B. P. Van der Gaag, D. D. Mahoney, A. S. Gozdz, L. T. Florez, J. P. Harbison, and M. D. Sturge, Phys. Rev. Lett. 67, 1326 (1991).
  7. L. Pfeiffer, K. W. West, H. L. Stormer, J. P. Eisenstein, K. W. Baldwin, D. Gershoni, and J. Spector, Appl. Phys. Lett. 56, 1697 (1990).
  8. D. Gershoni, J. S. Weiner, S. N. G. Chu, G. A. Baraff, J. M. Vandenberg, L. N. Pfeiffer, K. W. West, R. A. Logan, and T. Tanbun-Ek, Phys. Rev. Lett. 65, 1631 (1990).
  9. H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West, and J. Spector, Appl. Phys. Lett. 58, 726 (1991).
  10. Y. C. Chang, L. L. Chang, and L. Esaki, Appl. Phys. Lett. 47, 1324 (1985).
  11. R. L. Schult, D. G. Ravenhall, and H. W. Wyld, Phys. Rev. B 39, 5476 (1989).
  12. F. Sols, M. Macucci, U. Ravaioli, and K. Hess, J. Appl. Phys. 66, 3892 (1989).
  13. F. M. Peeters, Superlattice Microstructures 6, 217 (1989);
    14. in Science and Engineering of 1- and 0-Dimensional Semiconductors, edited by S. P. Beaumont and C. M. Sotomayor-Torres (Plenum, New York, 1990).
  14. Both PL peaks exhibit totally similar dependences on temperature and power density what rules out the interpretation of the doublet feature as related to defects.
  15. W. T. Masselink, Y. C. Chang, and H. Morkoc, Phys. Rev. B 28, 7373 (1983).
  16. H. U. Baranger, D. P. DiVincenzo, R. A. Jalabert, and A. D. Stone, Phys. Rev. B 44, 10637 (1991), and references therein.
  17. S. T. Pantelides, Rev. Mod. Phys. 50, 797 (1978).
  18. D. S. Citrin and Y. C. Chang, Phys. Rev. B 43, 11703 (1991);
    19. C. R. McIntyre and L. J. Sham, ibid. 45, 9443 (1992).
  19. C. Weisbuch and B. Vinter, Quantum Semiconductor Structures (Academic, San Diego, 1991), p. 65.

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