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Observation of quantum wire formation at intersecting quantum wells

Appl. Phys. Lett. 61, 1956 (1992); doi:10.1063/1.108375

Issue Date: 19 October 1992

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A. R. Goñi, L. N. Pfeiffer, K. W. West, A. Pinczuk, H. U. Baranger, and H. L. Stormer
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
We report the first observation of a quantum bound state formed at the junction of two intersecting quantum wells in the shape of a T. The atomically precise T junctions are fabricated by a novel cleaved edge overgrowth process in the AlGaAs/GaAs system. The identification of bound states with energies in excess of 20 meV is made by optical emission and absorption spectroscopy. Such quantum wire states are caused by the unique confinement of the lowest state wave function to the region of the T junction. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 22 May 1992; accepted 10 August 1992
Permalink: http://link.aip.org/link/?APPLAB/61/1956/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.65.Fa
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds) IIIV and IIVI inorganics
  • 73.20.Dx
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
  • YEAR: 1992

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0003-6951 (print)   1077-3118 (online)
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