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Effect of hydrogen on surface roughening during Si homoepitaxial growth

Appl. Phys. Lett. 63, 3571 (1993); doi:10.1063/1.110100

Issue Date: 27 December 1993

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D. P. Adams and S. M. Yalisove
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136

D. J. Eaglesham
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness within the epitaxial film that increases rapidly until the Si film exhibits a crystalline to amorphous transition. The rate at which the surface roughens depends critically on the partial pressure of deuterium. Although the kinetics of growth are sensitive to small pressures (4×10−8 Torr) of D, it appears that the breakdown of epitaxy does not result from a ``critical'' D concentration at the surface. This work suggests that the crystalline to amorphous transition, instead, results from increased roughening during epitaxy. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 26 May 1993; accepted 12 October 1993
Permalink: http://link.aip.org/link/?APPLAB/63/3571/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.-a
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film growth, structure, and epitaxy
  • YEAR: 1993

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0003-6951 (print)   1077-3118 (online)
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REFERENCES (19)
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