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Randomly oriented Angstrom-scale microroughness at the Si(100)/SiO2 interface probed by optical second harmonic generation

Appl. Phys. Lett. 64, 2139 (1994); doi:10.1063/1.111711

Issue Date: 18 April 1994

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J. I. Dadap, B. Doris, Q. Deng, and M. C. Downer
Department of Physics, University of Texas at Austin, Austin, Texas 78712

J. K. Lowell
Advanced Micro Devices, 5204 E. Ben White Blvd., Austin, Texas 78741

A. C. Diebold
Sematech, 2706 Montopolis Drive, Austin, Texas 78741
Femtosecond pulses from a Kerr–Lens mode-locked Ti:sapphire laser are used to generate second harmonic from a series of native-oxidized Si(100)/SiO2 and hydrogen-terminated Si(100) samples prepared with systematically varied interfacial microroughness with root-mean-square feature heights ranging from 0.6 to 4.3 Å. Rotationally anisotropic second harmonic signals using different polarization configurations were measured in air and correlated with atomic force microscopy measurements. The results demonstrate rapid, noncontact, noninvasive measurement of Angstrom-level Si(100)/SiO2 interface roughness by optical second harmonic generation. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 29 July 1993; accepted 17 February 1994
Permalink: http://link.aip.org/link/?APPLAB/64/2139/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.Fx
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces Diffusion; interface formation
  • 42.65.Ky
    Optics Nonlinear optics Harmonic generation, frequency conversion, parametric oscillation, and parametric amplification
  • 61.16.Ch
    Structure of solids and liquids; crystallography Electron microscopy and other methods Scanning probe microscopy: scanning tunneling, atomic force, magnetic, etc.
  • YEAR: 1994

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ISSN:
0003-6951 (print)   1077-3118 (online)
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