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High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 µm

Appl. Phys. Lett. 65, 616 (1994); doi:10.1063/1.112249

Issue Date: 1 August 1994

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A. N. Baranov, C. Fouillant, P. Grunberg, J. L. Lazzari, S. Gaillard, and A. Joullié
Equipe de Microoptoélectronique de Montpellier (EM2), URA CNRS 392, Université de Montpellier II, Sciences et Techniques du Languedoc, 34095 Montpellier Cedex 05, France
Mesa-stripe injection lasers have been prepared from liquid phase epitaxial Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53 As0.04Sb0.96 double heterostructures having an active zone of n-type conductivity. These laser diodes could operate pulsed at heatsink temperatures up to 120 °C, and showed high characteristic temperature near ambient (T0[approximately-equal-to]110 K), comparable with theoretical value. Applied Physics Letters is copyrighted by The American Institute of Physics.
History: Received 24 February 1994; accepted 18 May 1994
Permalink: http://link.aip.org/link/?APPLAB/65/616/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.De
    Electrical and magnetic devices Semiconductor devices Semiconductor-device characterization and modeling
  • 42.55.Px
    Optics Lasers Semiconductor lasers; laser diodes
  • 81.15.Lm
    Materials science Methods of deposition of films and coatings Deposition from liquid phases (melts, solutions, and surface layers on liquids)
  • YEAR: 1994

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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