Terahertz four-wave mixing in semiconductor optical amplifiers: Experiment and theory
Appl. Phys. Lett. 65, 944 (1994); doi:10.1063/1.112156
Issue Date: 22 August 1994
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Highly nondegenerate four-wave mixing processes in bulk semiconductor optical amplifiers are analyzed by comparing experimental data at detuning frequencies up to 3 THz with numerical calculations based on semiclassical density-matrix equations. Carrier heating and spectral holeburning are found to be dominant in mediating wave mixing in the THz region and lead to comparable contributions to nonlinear gain suppression in semiconductor lasers.
Applied Physics Letters is copyrighted by The American Institute of Physics.
| History: | Received 18 April 1994; accepted 14 June 1994 |
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KEYWORDS and PACS
SEMICONDUCTOR LASERS,
WAVEGUIDES,
AMPLIFIERS,
FOUR&minus,
WAVE MIXING,
DENSITY MATRIX,
NUMERICAL ANALYSIS,
CHARGE CARRIERS,
HEATING,
HOLE BURNING,
GAIN,
DYNAMICS,
SEMICONDUCTOR MATERIALS
- 42.65.Hw
Optics Nonlinear optics Phase conjugation, optical mixing, and photorefractive effect - 78.47.+p
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter - 42.55.Px
Optics Lasers Semiconductor lasers; laser diodes - 42.65.Re
Optics Nonlinear optics Ultrafast processes; optical pulse generation and pulse compression - YEAR: 1994
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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