Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
Phonon-assisted carrier capture into a quantum well in an electric field
We have theoretically investigated the capture of electrons into a quantum well by LO phonon scattering. The calculation was performed for a single, undoped GaAs/AlxGa1−xAs quantum well under ap...
Next Article
Semiconductor characterization with the scanning surface harmonic microscope
The scanning surface harmonic microscope, in which a microwave signal is applied across a tip-sample tunneling gap and higher harmonics are detected, is sensitive to the capacitance/voltage characteri...

Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures

Appl. Phys. Lett. 65, 2042 (1994); doi:10.1063/1.112787

Issue Date: 17 October 1994

You are not logged in to this journal. Log in

J. L. Sánchez-Rojas, A. Sacedón, F. González-Sanz, E. Calleja, and E. Muñoz
Departamento Ingeniería Electrónica, E.T.S.I. Telecommunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
A series of (111)B InxGa1−xAs/GaAs multiple quantum well p-i-n structures have been investigated via low temperature photocurrent and photoluminescence spectroscopies. The indium mole fraction was in the range of 0.07–0.23. Evolution of the experimental blueshifts of the transition energies, with the external bias, agreed very well with the theoretical calculations. This allowed us to obtain precise information about the piezoelectric constant, e14, for the various In compositions. For the range of x investigated, we have found e14(x) to be linear with x but significantly lower than predicted by a simple linear interpolation of the accepted values for GaAs and InAs. ©1994 American Institute of Physics.
History: Received 22 March 1994; accepted 15 August 1994
Permalink: http://link.aip.org/link/?APPLAB/65/2042/1
BUY THIS ARTICLE   (US$24)
Download PDF (65 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 77.65.Bn
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electrostriction Piezoelectric and electrostrictive constants
  • 78.66.Fd
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of thin films, surfaces, and layer structures (superlattices, heterojunctions, and multilayers) IIIV semiconductors
  • 78.55.Cr
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence IIIV semiconductors
  • 73.50.Pz
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport phenomena in thin films Photoconduction and photovoltaic effects; photodielectric effects
  • YEAR: 1994

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (12)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. B. K. Laurich, K. Elcess, C. G. Fonstad, J. G. Beery, C. Mailhiot, and D. L. Smith, Phys. Rev. Lett. 62, 649 (1989).
  2. E. A. Caridi, T. Y. Chang, K. W. Goosen, and L. F. Eastman, Appl. Phys. Lett. 56, 659 (1990).
  3. D. L. Smith and C. Mailhiot, Phys. Rev. Lett. 58, 1264 (1987).
  4. A. S. Pabla, J. L. Sanchez-Rojas, J. Woodhead, R. Grey, J. P. R. David, G. J. Rees, G. Hill, M. A. Pate, P. N. Robson, R. A. Hogg, T. A. Fisher, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, and D. J. Mowbray, Appl. Phys. Lett. 63, 752 (1993).
  5. R. L. Tober and T. B. Bahder, Appl. Phys. Lett. 63, 2369 (1993).
  6. R. A. Hogg, T. A. Fisher, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, D. J. Mowbray, J. P. R. David, A. S. Pabla, G. J. Rees, R. Grey, J. Woodhead, J. L. Sanchez-Rojas, G. Hill, M. A. Pate, and P. N. Robson, Phys. Rev. B 48, 8491 (1993).
  7. G. Arlt and P. Quadflieg, Phys. Status Solidi 25, 323 (1968).
  8. J. L. Sánchez-Rojas, E. Muñoz, A. S. Pabla, J. P. R. David, G. J. Rees, J. Woodhead, and P. N. Robson, Inst. Phys. Conf. Ser. 136, 331 (1993).
  9. W. W. Lui and M. Fukuma, J. Appl. Phys. 60, 1555 (1986).
  10. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegman, T. H. Wood, and C. A. Burrus, Phys. Rev. B 32, 1043 (1985).
  11. O. Madelung, Semiconductors, Landolt-Börnstein, New Series, Vol. 17 (Springer, New York, 1982).
  12. A. R. Hutson and D. L. White, J. Appl. Phys. 33, 40 (1962).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics