Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
Alternating-current excitation of InP based delta layers
We have studied a nonlinear response of a field-effect transistor multi -layer structure to an external alternating-current signal. A specific resonance behavior of the source-drain resistance was obs...
Next Article
Optical properties of ternary and quaternary IV–VI semiconductor layers on (100) BaF2 substrates
Fourier transform infrared (FTIR) absorption spectra and photoluminescence (PL) spectra for PbSe0.78Te0.22 and Pb0.95Sn0.05Se0.80Te0.20 layers grown by liquid phase epitaxy on (100) BaF2 substrates ar...

Studying the insulator–conductor interface with a scanning tunneling microscope

Appl. Phys. Lett. 66, 1352 (1995); doi:10.1063/1.113198

Issue Date: 13 March 1995

You are not logged in to this journal. Log in

Michael I. Sumetskii and Harold U. Baranger
AT&T Bell Laboratories 1D-230, Murray Hill, New Jersey 07974-0636
We suggest that a scanning tunneling microscope (STM) may be used for investigating the insulator–conductor interface, in particular SiO2/Si, at nanometer scale. For an insulating film transparent to tunneling, we estimate, using a simple model, the roughness of the interface from the STM image. It is found that the interface roughness is less than the roughness of the image surface times the ratio of effective decay lengths in the film and in vacuum. For relatively wide films, of order 10 nm, STM measurement in the field emission regime can give the interface image with 1 nm precision. ©1995 American Institute of Physics.
History: Received 7 September 1994; accepted 16 January 1995
Permalink: http://link.aip.org/link/?APPLAB/66/1352/1
BUY THIS ARTICLE   (US$24)
Download PDF (119 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 61.16.Ch
    Structure of solids and liquids; crystallography Electron microscopy and other methods Scanning probe microscopy: scanning tunneling, atomic force, magnetic, etc.
  • 68.35.Bs
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces Atomic and molecular structure; crystal shapes; surface topography
  • 73.40.Qv
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metalinsulatorsemiconductor structures (including semiconductor-to-insulator)
  • YEAR: 1995

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (9)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. The Physics and Chemistry of SiO2 and the Si–SiO2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988).
  2. M. Nakazawa and H. Sekiyama, Appl. Phys. Lett. 56, 2108 (1990).
  3. M. L. Green, D. Brasen, K. W. Evans-Lutterodt, L. C. Feldman, K. Krish, W. Lennard, H.-T. Tang, L. Manchanda, and M.-T. Tang, Appl. Phys. Lett. 65, 848 (1994).
  4. S. Kitamura, T. Sato, and M. Iwatsuki, Nature 351, 215 (1991).
  5. K. E. Johnson and T. Engel, Phys. Rev. Lett. 69, 339 (1992).
  6. A. Feltz, U. Memmert, and R. J. Behm, Chem. Phys. Lett. 192, 271 (1992).
  7. J. V. Seiple and J. P. Pelz, Phys. Rev. Lett. 73, 999 (1994). (1992).
  8. M. Sumetskii, J. Phys. Condens. Matter 2, 2487 (1990).
  9. M. Sumetskii, Zh. Eksp. Teor. Fiz. 94, 7 (1988) [Sov. Phys. JETP 67, 438 (1988)].

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics