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Studying the insulator–conductor interface with a scanning tunneling microscope

Appl. Phys. Lett. 66, 1352 (1995); doi:10.1063/1.113198

Issue Date: 13 March 1995

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Michael I. Sumetskii and Harold U. Baranger
AT&T Bell Laboratories 1D-230, Murray Hill, New Jersey 07974-0636
We suggest that a scanning tunneling microscope (STM) may be used for investigating the insulator–conductor interface, in particular SiO2/Si, at nanometer scale. For an insulating film transparent to tunneling, we estimate, using a simple model, the roughness of the interface from the STM image. It is found that the interface roughness is less than the roughness of the image surface times the ratio of effective decay lengths in the film and in vacuum. For relatively wide films, of order 10 nm, STM measurement in the field emission regime can give the interface image with 1 nm precision. ©1995 American Institute of Physics.
History: Received 7 September 1994; accepted 16 January 1995
Permalink: http://link.aip.org/link/?APPLAB/66/1352/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.16.Ch
    Structure of solids and liquids; crystallography Electron microscopy and other methods Scanning probe microscopy: scanning tunneling, atomic force, magnetic, etc.
  • 68.35.Bs
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces Atomic and molecular structure; crystal shapes; surface topography
  • 73.40.Qv
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metalinsulatorsemiconductor structures (including semiconductor-to-insulator)
  • YEAR: 1995

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (9)
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