Interdiffusion induced enhancement of one-dimensional level separation in quantum wires
Appl. Phys. Lett. 67, 2633 (1995); doi:10.1063/1.114319
Issue Date: 30 October 1995
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We have calculated the effect of alloy interdiffusion on the one-dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusion mechanism. ©1995 American Institute of Physics.
| History: | Received 28 July 1995; accepted 5 September 1995 |
| Permalink: |
http://link.aip.org/link/?APPLAB/67/2633/1 |
KEYWORDS and PACS
ALUMINIUM ARSENIDES,
DIFFUSION,
ELECTRONIC STRUCTURE,
ENERGY ,
LEVEL SPLITTING,
GALLIUM ARSENIDES,
HETEROSTRUCTURES,
INTERFACE STRUCTURE,
QUANTUM WIRES
- 68.35.Fx
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solid
solid interfaces
Diffusion; interface formation
- 73.20.Dx
Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) - YEAR: 1995
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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