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Interdiffusion induced enhancement of one-dimensional level separation in quantum wires

Appl. Phys. Lett. 67, 2633 (1995); doi:10.1063/1.114319

Issue Date: 30 October 1995

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J. M. Sallese, J. F. Carlin, M. Gailhanou, and P. Grunberg
Institut de Micro- et Optoélectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
We have calculated the effect of alloy interdiffusion on the one-dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusion mechanism. ©1995 American Institute of Physics.
History: Received 28 July 1995; accepted 5 September 1995
Permalink: http://link.aip.org/link/?APPLAB/67/2633/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.Fx
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces Diffusion; interface formation
  • 73.20.Dx
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
  • YEAR: 1995

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0003-6951 (print)   1077-3118 (online)
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