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Double acceptor doped Ge: A new medium for inter-valence-band lasers

Appl. Phys. Lett. 68, 3075 (1996); doi:10.1063/1.116427

Issue Date: 27 May 1996

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E. Bründermann, A. M. Linhart, L. Reichertz, and H. P. Röser
DLR, Institute for Space Sensor Technology, D-12489 Berlin, Germany

O. D. Dubon, W. L. Hansen, G. Sirmain, and E. E. Haller
Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720
We report on intervalence-band laser emission from Be- and Zn-doped germanium crystals. The duty cycle of 10 – 3 at a repetition rate of 1 kHz is one order of magnitude larger than the highest duty cycle reported for p-Ge lasers doped by group II acceptors. This improvement is due to the much larger hole binding energy of double acceptors Be and Zn which results in a strong reduction of the internal absorption of the generated far-infrared radiation. Laser action has been achieved with crystal volumes as small as 0.04 cm – 3, and a laser pulse length of 25 µs has been reached. Germanium crystals doped with these acceptors may offer an opportunity for achieving the ultimate goal of continuous wave operation. ©1996 American Institute of Physics.
History: Received 13 March 1996; accepted 2 April 1996
Permalink: http://link.aip.org/link/?APPLAB/68/3075/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Optics Lasers Semiconductor lasers; laser diodes
  • 78.45.+h
    Optical properties, condensed matter spectroscopy and other interactions of radiation and particles with condensed matter Stimulated emission
  • 44.30.+v
    Heat transfer, thermal and thermodynamic processes Heat transfer in inhomogeneous media, in porous media, and through interfaces
  • 72.20.My
    Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators Galvanomagnetic and other magnetotransport effects
  • YEAR: 1996

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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