Heteroepitaxial growth of 
-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane
A non-toxic and non-flammable organosilicon source having alternate Si–C bonding structure, bis-trimethylsilylmethane [C7H20Si2], was first used to deposit epitaxial -SiC films at low growth temp...
-SiC thin films on Si(100) substrate using bis-trimethylsilylmethaneA non-toxic and non-flammable organosilicon source having alternate Si–C bonding structure, bis-trimethylsilylmethane [C7H20Si2], was first used to deposit epitaxial -SiC films at low growth temp...
Stability of binary logic tunneling phase states in dc-biased and ac-pumped single-electron tunnel junctions
We have investigated the stability of phase states of single-electron tunneling oscillation phase locked by an external ac pump with twice the tunneling frequency using the Monte Carlo method. It has ...
We have investigated the stability of phase states of single-electron tunneling oscillation phase locked by an external ac pump with twice the tunneling frequency using the Monte Carlo method. It has ...
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
Appl. Phys. Lett. 69, 4056 (1996); doi:10.1063/1.117816
Issue Date: 23 December 1996
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Continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT). The threshold current and voltage of the LD were 130 mA and 8 V, respectively. The threshold carrier density was 9 kA/cm2. The lifetime of the LDs under RT cw operation was 1 s due to large heat generation. Mode hopping of the emission wavelength of the LDs was observed. The average wavelength drift due to temperature increase was 0.066 nm/K between 20 and 70 °C, because of the temperature dependence of the gain profile due to band-gap narrowing of the InGaN active layer. ©1996 American Institute of Physics.
| History: | Received 23 September 1996; accepted 19 October 1996 |
| Permalink: |
http://link.aip.org/link/?APPLAB/69/4056/1 |
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BibSonomy
KEYWORDS and PACS
LASER DIODES,
CW LASERS,
QUANTUM WELLS,
INDIUM ARSENIDES,
GALLIUM ARSENIDES,
THRESHOLD CURRENT,
GAIN,
TEMPERATURE DEPENDENCE
- 42.55.Px
Optics Lasers Semiconductor lasers; laser diodes - 42.60.Pk
Optics Laser optical systems: design and operation Continuous operation - 78.66.Fd
Optical properties, condensed matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures: superlattices, quantum well structures, multilayers, and microparticles III
V semiconductors
- YEAR: 1996
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
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