Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy
Atomic force microscopy (AFM) is adopted for evaluation of strained InGaAs/GaAs quantum well structures grown by metalorganic vapor phase epitaxy. InAs-rich clusters are formed at the upper interface ...
Atomic force microscopy (AFM) is adopted for evaluation of strained InGaAs/GaAs quantum well structures grown by metalorganic vapor phase epitaxy. InAs-rich clusters are formed at the upper interface ...
Coherent electron–hole correlations in quantum dots
Using numerical time propagation of the electron–hole wave function, we demonstrate how various coherent correlation effects can be observed by laser excitation of a nanoscale semiconductor quant...
Using numerical time propagation of the electron–hole wave function, we demonstrate how various coherent correlation effects can be observed by laser excitation of a nanoscale semiconductor quant...
In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon
Appl. Phys. Lett. 70, 1137 (1997); doi:10.1063/1.119073
Issue Date: 3 March 1997
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In situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the gas-phase ESR signals both of atomic hydrogen and radicals related with silane molecules. Dynamic changes of the Si dangling-bond signal intensity have been observed in real-time, where the signal intensity increases with deposition time and decreases after stopping the deposition due to a structural relaxation. High potentiality of in situ ESR techniques for microscopic understanding of film growth and surface reaction has been demonstrated. ©1997 American Institute of Physics.
| History: | Received 28 October 1996; accepted 2 January 1997 |
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http://link.aip.org/link/?APPLAB/70/1137/1 |
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Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
silicon,
elemental semiconductors,
amorphous semiconductors,
hydrogen,
semiconductor thin films,
paramagnetic resonance,
dangling bonds,
semiconductor growth,
free radicals,
noncrystalline structure,
plasma CVD
- 81.15.Gh
Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) - 81.05.Cy
Materials science Specific materials: fabrication, treatment, testing, and analysis Elemental semiconductors - 76.30.Mi
Magnetic resonances and relaxation in condensed matter,ossbauer effect Electron paramagnetic resonance and relaxation Color centers and other defects
- 76.30.Rn
Magnetic resonances and relaxation in condensed matter, - 81.05.Gc
Materials science Specific materials: fabrication, treatment, testing, and analysis Amorphous semiconductors - YEAR: 1996-97
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (11)
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