Comparison of high field electron transport in GaN and GaAs
An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN and GaAs. In particular, velocity overshoot and electron transit times are examined. In GaN, we find the...
An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN and GaAs. In particular, velocity overshoot and electron transit times are examined. In GaN, we find the...
Enhanced electroabsorption in tensile-strained GayIn1 – yAs/AlxIn1 – xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions
Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47As quantum wells with Al0.48In0.52As barriers. This behavior...
Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47As quantum wells with Al0.48In0.52As barriers. This behavior...
Noise-free avalanche multiplication in Si solid state photomultipliers
Appl. Phys. Lett. 70, 2852 (1997); doi:10.1063/1.119022
Issue Date: 26 May 1997
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Si solid state photomultipliers utilize impact ionization of shallow impurity donor levels to create an avalanche multiplication when triggered by a photoexcited hole. The distribution of pulse height from a single photon detection event shows narrow dispersion, which implies that the avalanche multiplication process in these devices is inherently noise-free. We have measured the excess noise factor using two different techniques, digital pulse height analysis and analog noise power measurement. The results demonstrate nearly noise-free avalanche multiplication accomplished in these devices. ©1997 American Institute of Physics.
| History: | Received 27 February 1997; accepted 29 March 1997 |
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http://link.aip.org/link/?APPLAB/70/2852/1 |
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BibSonomy
KEYWORDS and PACS
photomultipliers,
impact ionisation,
impurity states,
elemental semiconductors,
avalanche breakdown,
semiconductor device noise,
silicon,
photodetectors
- 85.60.Ha
Electronic and magnetic devices; microelectronics Optoelectronic devices Photomultipliers; phototubes and photocathodes - 72.20.Ht
Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators High-field and nonlinear effects - 72.70.+m
Electronic transport in condensed matter Noise processes and phenomena - YEAR: 1996-97
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0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (12)
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