Applied Physics Letters
   
 
 
 
Previous Article
Temperature independent performance of organic semiconductor lasers
Characteristics of lasing in optically pumped, vacuum deposited organic semiconductor thin films of tris-(8-hydroxyquinoline) aluminum doped with DCM laser dye are studied as a function of DCM concent...
Next Article
Evidence for strong spatially localized band-filling effects at interface islands
We have observed saturation of photoluminescence peak at extremely low pump intensities in growth-interrupted and undoped asymmetric-coupled quantum-well structures. We believe the saturation is due t...

Two-photon optical beam induced current imaging through the backside of integrated circuits

Appl. Phys. Lett. 71, 2578 (1997); doi:10.1063/1.119334

Issue Date: 3 November 1997

You are not logged in to this journal. Log in

Chris Xu and Winfried Denk
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
Two-photon optical beam induced current (TOBIC) images were acquired through the polished backsides of integrated circuits. An excitation beam with a photon energy below the band gap can traverse even thick substrates virtually unattenuated. At the focus—and only there—two-photon absorption generates electron-hole pairs very efficiently when using a sub-picosecond light source. An additional advantage of TOBIC is a significant increase in spatial resolution. With high numerical aperture objective lense features smaller than 1 µm are easily discernible. ©1997 American Institute of Physics.
History: Received 16 July 1997; accepted 4 September 1997
Permalink: http://link.aip.org/link/?APPLAB/71/2578/1
BUY THIS ARTICLE   (US$28)
Download PDF (219 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.40.-e
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  • 72.40.+w
    Electronic transport in condensed matter Photoconduction and photovoltaic effects
  • YEAR: 1996-97

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (11)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. H. Komoda and K. Shimizu, Jpn. J. Appl. Phys., Part 1 33, 3393 (1994).
  2. T. Wilson and C. J. R. Sheppard, Theory and Practice of Scanning Optical Microscopy (Academic, New York, 1984).
  3. Edward I. Cole, Jr., Microelectron. Eng. 31, 13 (1996).
  4. B. P. Richards and P. K. Footner, The Role of Microscopy in Semiconductor Failure Analysis (Oxford University Press, New York, 1992).
  5. E. Ziegler, Microelectron. Eng. 12, 73 (1990).
  6. B. Bossmann, P. Baurschmidt, K. Hussey, and E. Black, Proceedings of ISTFA, 1992, pp. 351–361.
  7. J. F. Reintjes and J. C. McGroddy, Phys. Rev. Lett. 30, 901 (1973).
  8. W. Denk, J. H. Strickler, and W. W. Webb, Science 248, 73 (1990).
  9. W. Denk and K. Svoboda, Neuron 18, 351 (1997).
  10. O. Nakamura, Optik (Stuttgart) 93, 39 (1993).
  11. M. E. Fermann, Appl. Phys. B: Photophys. Laser Chem. 58, 197 (1994).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.