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Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy

Appl. Phys. Lett. 72, 1208 (1998); doi:10.1063/1.121015

Issue Date: 9 March 1998

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C. H. Chan, M. C. Chen, H. H. Lin, Y. F. Chen, and G. J. Jan
Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

Y. H. Chen
Department of Physics, National Taipei University of Technology, Taipei, Taiwan, Republic of China
Strained-layer (111)B In0.2Ga0.8As/GaAs p-i-n quantum well structures grown with exciton transitions well resolved at room temperature have been studied by photoreflectance spectroscopy. Using the reduced mass deduced from experiments, the built-in electric field in the barrier region is obtained from the above band-gap Franz–Keldysh oscillations. The strain-induced piezoelectric field is then determined directly from a comparison of the periods of Franz–Keldysh oscillations in different samples. Numerical solutions for the exciton transitions from the derived potential profiles are in good agreement with the experimental results. The piezoelectric constant is also determined using the piezoelectric field. ©1998 American Institute of Physics.
History: Received 28 October 1997; accepted 8 January 1998
Permalink: http://link.aip.org/link/?APPLAB/72/1208/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.65.Bn
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electrostriction Piezoelectric and electrostrictive constants
  • 78.20.Wc
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of bulk materials and thin films Other optical properties
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures: superlattices, quantum well structures, multilayers, and microparticles IIIV semiconductors
  • 81.05.Ea
    Materials science Specific materials: fabrication, treatment, testing, and analysis IIIV semiconductors
  • 68.65.+g
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
  • 73.20.Dx
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Electron states in low-dimensional structures (superlattices, quantum well structures, and multilayers)
  • 73.61.Ey
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) IIIV semiconductors
  • 71.35.Cc
    Electronic structure Excitons and related phenomena Intrinsic properties of excitons; optical absorption spectra
  • YEAR: 1998

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ISSN:
0003-6951 (print)   1077-3118 (online)
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