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MgxZn1 – xO as a II–VI widegap semiconductor alloy

Appl. Phys. Lett. 72, 2466 (1998); doi:10.1063/1.121384

Issue Date: 11 May 1998

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A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, and H. Koinuma
Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226, Japan

Y. Sakurai and Y. Yoshida
Faculty of Engineering, Toyo University, 2100 Kujirai, Kawagoe 350, Japan

T. Yasuda and Y. Segawa
Photodynamic Research Center, The Institute of Physical and Chemical Research, 19-1399 Nagamachi Koeji, Aoba, Sendai 980, Japan
We propose a widegap II–VI semiconductor alloy, MgxZn1 – xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1 – xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x = 0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x >= 0.36. Lattice constants of MgxZn1 – xO films changed slightly (~ 1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x = 0) to 3.87 eV (x = 0.33) at 4.2 K. ©1998 American Institute of Physics.
History: Received 8 December 1997; accepted 12 March 1998
Permalink: http://link.aip.org/link/?APPLAB/72/2466/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Fg
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Laser deposition
  • 85.60.Jb
    Electronic and magnetic devices; microelectronics Optoelectronic devices Light-emitting devices
  • 81.05.Dz
    Materials science Specific materials: fabrication, treatment, testing, and analysis IIVI semiconductors
  • 68.55.Jk
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Structure and morphology; thickness
  • 78.55.Et
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Photoluminescence IIVI semiconductors
  • 78.66.Hf
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures: superlattices, quantum well structures, multilayers, and microparticles IIVI semiconductors
  • YEAR: 1998

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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  1. I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, Appl. Phys. Lett. 17, 109 (1970).
  2. Z. K. Tang, P. Yu, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Solid State Commun. 103, 459 (1997).
  3. Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma, Z. K. Tang, P. Yu, and G. K. L. Wong, Phys. Status Solidi B 202, 669 (1997).
  4. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., Part 2 36, L1453 (1997);
    5. J. T. Cheung (private communication).
  5. H. Okuyama, K. Nakano, T. Miyajima, and K. Akimoto, Jpn. J. Appl. Phys., Part 2 30, L1620 (1991).
  6. R. D. Shannon, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 32, 751 (1976).
  7. H. Koinuma, M. Kawasaki, and M. Yoshimoto, Mater. Res. Soc. Symp. Proc. 397, 145 (1996).
  8. R. E. Honig and D. A. Kramer, RCA Rev. 30, 285 (1969).
  9. J. F. Sarver, Fred L. Katnack, and F. A. Hummel, J. Electrochem. Soc. 106, 960 (1959).
  10. R. E. Leuchtner, Mater. Res. Soc. Symp. Proc. 397, 157 (1996).
  11. M. Sano and M. Aoki, Jpn. J. Appl. Phys. 15, 1943 (1976).
  12. For example, R. Zimmermann, J. Cryst. Growth 101, 346 (1990).
  13. E. C. Heltemes and H. L. Swinney, J. Appl. Phys. 38, 2387 (1967).

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