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Carbon nanotube tipped atomic force microscopy for measurement of < 100 nm etch morphology on semiconductors

Appl. Phys. Lett. 73, 529 (1998); doi:10.1063/1.122069

Issue Date: 27 July 1998 | See: Erratum

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G. Nagy, M. Levy, R. Scarmozzino, and R. M. Osgood, Jr.
Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027

H. Dai and R. E. Smalley
Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77251

C. A. Michaels and G. W. Flynn
Department of Chemistry, Columbia University, New York, New York 10027

G. F. McLane
U.S. Army Research Laboratory, Ft. Monmouth, New Jersey 07703
The use of carbon nanotubes as tips in atomic force microscopy for a systematic study of dry etching pattern transfer in GaAs is described. The GaAs samples are patterned via electron beam lithography and then etched using magnetron reactive ion or chemically assisted ion beam processing. The technique allows diagnosis, in air, of etched features with scale sizes of < 100 nm. ©1998 American Institute of Physics.
History: Received 7 January 1998; accepted 26 May 1998
Permalink: http://link.aip.org/link/?APPLAB/73/529/1
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ERRATUM

  1. Erratum: "Carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors" [Appl. Phys. Lett. 73, 529 (1998)]
    G. Nagy et al.
    Appl. Phys. Lett. 73, 1448 (1998)

KEYWORDS and PACS

Keywords
PACS
  • 61.16.Ch
    Structure of solids and liquids; crystallography Electron, ion, and scanning probe microscopy Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc.
  • 81.05.Ea
    Materials science Specific materials: fabrication, treatment, testing, and analysis IIIV semiconductors
  • 85.40.Hp
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Lithography, masks, and pattern transfer
  • 61.46.+w
    Structure of solids and liquids; crystallography Clusters, nanoparticles, and nanocrystalline materials
  • 68.35.Bs
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces Surface structure and topography
  • 81.65.Cf
    Materials science Surface treatments Surface cleaning, etching, patterning
  • YEAR: 1998

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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