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Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions

Appl. Phys. Lett. 73, 2829 (1998); doi:10.1063/1.122604

Issue Date: 9 November 1998

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F. Montaigne, J. Nassar, A. Vaurès, F. Nguyen Van Dau, F. Petroff, A. Schuhl, and A. Fert
Unité Mixte de Physique CNRS-Thomson, LCR, Domaine de Corbeville, 91404 Orsay, France
Single Co/Al2O3/NiFe and double Co/Al2O3/Co/Al2O3/NiFe planar tunnel junctions were grown by sputtering and subsequently patterned in a four-step process using optical lithography. The Al2O3 barriers are formed by radio frequency plasma oxidation of 1.5 nm aluminum layers. The double junctions exhibit three clear resistance levels depending on the relative configuration of the magnetizations. Both single and double junctions exhibit maximum magnetoresistance (MR) ratios above 10% at room temperature and 20% at 30 K and a decrease of MR with increasing bias voltage. With regard to its low bias value, the MR is reduced by a factor of 2 at 0.26 V for the single junctions and at values above 0.8 V for the double junctions. The decay of the MR of double junctions with bias voltage is significantly slower than expected from two independent junctions in series. ©1998 American Institute of Physics.
History: Received 29 July 1998; accepted 10 September 1998
Permalink: http://link.aip.org/link/?APPLAB/73/2829/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.70.Pa
    Magnetic properties and materials Magnetic films and multilayers Giant magnetoresistance
  • 73.50.Jt
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport phenomena in thin films Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
  • 75.45.+j
    Magnetic properties and materials Macroscopic quantum phenomena in magnetic systems
  • 73.40.Rw
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metalinsulatormetal structures
  • 85.70.Kh
    Electronic and magnetic devices; microelectronics Magnetic devices Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
  • 75.60.Ej
    Magnetic properties and materials Domain effects, magnetization curves, and hysteresis Magnetization curves, hysteresis, Barkhausen and related effects
  • YEAR: 1998

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (12)
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