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Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

Appl. Phys. Lett. 73, 3656 (1998); doi:10.1063/1.122853

Issue Date: 21 December 1998

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H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, and R. P. H. Chang
Materials Research Center, Northwestern University, Evanston, Illinois 60208
A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ~ 380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. ©1998 American Institute of Physics.
History: Received 6 July 1998; accepted 14 October 1998
Permalink: http://link.aip.org/link/?APPLAB/73/3656/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Optics Lasers Semiconductor lasers; laser diodes
  • 42.60.By
    Optics Laser optical systems: design and operation Design of specific laser systems
  • YEAR: 1998

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ISSN:
0003-6951 (print)   1077-3118 (online)
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