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Electronic and transport properties of N-P doped nanotubes

Appl. Phys. Lett. 74, 79 (1999); doi:10.1063/1.122957

Issue Date: 4 January 1999

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Keivan Esfarjani and Amir A. Farajian
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Yuichi Hashi
Hitachi Tohoku Software Co., Honcho, Aoba Ku, Sendai 980, Japan

Yoshiyuki Kawazoe
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Electronic properties of a doped zigzag nanotube are investigated by a self-consistent tight-binding method. We propose that a doped nanotube with donor atoms on one side and acceptors on the other can function as a nano diode. It is shown that a potential step in the tube, created by two different types of doping in this case, causes the nonlinear rectifying effect. ©1999 American Institute of Physics.
History: Received 16 February 1998; accepted 3 November 1998
Permalink: http://link.aip.org/link/?APPLAB/74/79/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.20.Tx
    Electronic structure Electron density of states and band structure of crystalline solids Fullerenes and related materials; intercalation compounds
  • 73.61.Wp
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Fullerenes and related materials
  • 85.65.+h
    Electronic and magnetic devices; microelectronics Molecular electronic devices
  • 73.40.Ei
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Rectification
  • 71.15.Fv
    Electronic structure Methods of electronic structure calculations Atomic- and molecular-orbital methods (including tight binding approximation, valence-band method, etc.)
  • 71.15.Mb
    Electronic structure Methods of electronic structure calculations Density functional theory, local density approximation
  • 73.40.Lq
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Other semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions
  • YEAR: 1999

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (11)
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  1. M. S. Dresselhaus, G. Dresselhaus, and P. C. Eklund, Science of Fullerenes and Carbon Nanotubes (Academic, San Diego, 1996).
  2. L. Chico, L. X. Benedict, S. G. Louie, and M. L. Cohen, Phys. Rev. B 54, 2600 (1996).
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  4. O. Stephan et al., Science 266, 1683 (1994);
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  5. M. Terrones et al., Nature (London) 388, 52 (1997).
  6. S. J. Tans et al., Nature (London) 386, 474 (1997).
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  9. K. Esfarjani and Y. Kawazoe, JPCM, 10, 8257 (1998).
  10. Y. Miyamoto, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 74, 2993 (1995).
  11. The distance of 4.2 Å is the actual K-K distance, also used in the LDA calculation of Miyamoto et al. (see Ref. 10).

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