Spontaneous self-embedding of three-dimensional SiGe islands
It is shown that, under appropriate conditions, high-Ge-concentration coherent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may b...
It is shown that, under appropriate conditions, high-Ge-concentration coherent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may b...
Piezoelectric polarization associated with dislocations in wurtzite GaN
The piezoelectric polarization and its associated charge density are calculated for edge, screw, and mixed dislocations oriented parallel to the c axis in wurtzite GaN. It is shown that the polarizati...
The piezoelectric polarization and its associated charge density are calculated for edge, screw, and mixed dislocations oriented parallel to the c axis in wurtzite GaN. It is shown that the polarizati...
Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
Appl. Phys. Lett. 74, 570 (1999); doi:10.1063/1.123148
Issue Date: 25 January 1999
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We report the lateral epitaxial overgrowth of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The lateral epitaxial overgrowth on Si substrates was possible after achieving quasimonocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy, and atomic force microscopy were used to assess the quality of the lateral epitaxial overgrown films. Lateral growth rates more than five times as high as vertical growth rates were achieved for both lateral epitaxial overgrowths of GaN on sapphire and silicon substrates. ©1999 American Institute of Physics.
| History: | Received 14 September 1998; accepted 18 November 1998 |
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http://link.aip.org/link/?APPLAB/74/570/1 |
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KEYWORDS and PACS
atomic force microscopy,
scanning electron microscopy,
photoluminescence,
X-ray diffraction,
semiconductor growth,
gallium compounds,
III-V semiconductors,
wide band gap semiconductors,
MOCVD,
vapour phase epitaxial growth
- 81.05.Ea
Materials science Specific materials: fabrication, treatment, testing and analysis III–V semiconductors - 81.15.Gh
Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) - 81.15.Kk
Materials science Methods of deposition of films and coatings; film growth and epitaxy Vapor phase epitaxy; growth from vapor phase - 68.35.Bs
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solid–solid interfaces Surface structure and topography - 78.66.Fd
Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures III–V semiconductors - YEAR: 1999
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0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (11)
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