Ballistic phonon transmission across wafer-bonded crystals
Appl. Phys. Lett. 74, 821 (1999); doi:10.1063/1.123379
Issue Date: 8 February 1999
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We have studied phonon transmission through wafer-bonded GaAsGaAs interfaces using the techniques of phonon imaging. The short wavelength phonons used for imaging (
10 nm) are an extremely sensitive probe of the bond. We report unprecedented transmission of phonons through carefully prepared bonds. This transmission is remarkable since strong phonon scattering is usually observed at virtually any free surface. The dramatic differences between phonon transmission through well bonded interfaces and phonon transmission through poorly bonded interfaces are the basis of an easily determined quality factor of the bond. In contrast to electron microscopy, the phonon measurements of bond quality are not destructive. ©1999 American Institute of Physics.

10 nm) are an extremely sensitive probe of the bond. We report unprecedented transmission of phonons through carefully prepared bonds. This transmission is remarkable since strong phonon scattering is usually observed at virtually any free surface. The dramatic differences between phonon transmission through well bonded interfaces and phonon transmission through poorly bonded interfaces are the basis of an easily determined quality factor of the bond. In contrast to electron microscopy, the phonon measurements of bond quality are not destructive. ©1999 American Institute of Physics.
| History: | Received 6 July 1998; accepted 23 November 1998 |
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http://link.aip.org/link/?APPLAB/74/821/1 |
KEYWORDS and PACS
- 68.35.Ja
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces Surface and interface dynamics and vibrations - 81.05.Ea
Materials science Specific materials: fabrication, treatment, testing and analysis IIIV semiconductors - YEAR: 1999
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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