High-speed > 90% quantum-efficiency p–i–n photodiodes with a resonance wavelength adjustable in the 795–835 nm range
We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p–i–n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using...
We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p–i–n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using...
Polarization dynamics in vertical-cavity surface-emitting lasers with optical feedback through a quarter-wave plate
Square-wave switching of the intensities of the orthogonal linearly polarized components of the output of a vertical-cavity surface-emitting laser (VCSEL) found previously in experiments with polariza...
Square-wave switching of the intensities of the orthogonal linearly polarized components of the output of a vertical-cavity surface-emitting laser (VCSEL) found previously in experiments with polariza...
High-temperature continuous-wave 3–6.1 µm "W" lasers with diamond-pressure-bond heat sinking
Appl. Phys. Lett. 74, 1075 (1999); doi:10.1063/1.123486
Issue Date: 22 February 1999
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Optically pumped type-II W lasers emitting in the mid-infrared exhibited continuous-wave (cw) operating temperatures of 290 K at 
= 3.0 µm and 210 K at = 6.1 µm. Maximum cw output powers for 78 K were 260 mW at = 3.1 µm and nearly 50 mW at = 5.4 µm. These high maximum temperatures were achieved through the use of a diamond-pressure-bonding technique for heat sinking the semiconductor lasers. The thermal bond, which is accomplished through pressure alone, permits topside optical pumping through the diamond at wavelengths that would be absorbed by the substrate. ©1999 American Institute of Physics.
= 3.0 µm and 210 K at = 6.1 µm. Maximum cw output powers for 78 K were 260 mW at = 3.1 µm and nearly 50 mW at = 5.4 µm. These high maximum temperatures were achieved through the use of a diamond-pressure-bonding technique for heat sinking the semiconductor lasers. The thermal bond, which is accomplished through pressure alone, permits topside optical pumping through the diamond at wavelengths that would be absorbed by the substrate. ©1999 American Institute of Physics.
| History: | Received 10 November 1998; accepted 21 December 1998 |
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