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Large magnetoresistance in tunnel junctions with an iron oxide electrode

Appl. Phys. Lett. 74, 4017 (1999); doi:10.1063/1.123246

Issue Date: 28 June 1999

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P. Seneor, A. Fert, J.-L. Maurice, F. Montaigne, F. Petroff, and A. Vaurès
Unité Mixte de Physique CNRS/Thomson-CSF, LCR, Domaine de Corbeville, 91404 Orsay, France
We report on the fabrication and properties of (cobalt/alumina/iron oxide) tunnel junctions. We observe magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature. This large MR is ascribed to the presence of a Fe3 – xO4 (close to half-metallic magnetite) phase identified by electron diffraction. At low temperature, the MR drops sharply when the bias voltage is smaller than 10 mV, which suggests that the magnetoresistance originates from the activation of tunneling channels through spin polarized states below and above the Fermi level in the iron oxide. ©1999 American Institute of Physics.
History: Received 3 February 1999; accepted 30 April 1999
Permalink: http://link.aip.org/link/?APPLAB/74/4017/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Ns
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metal–nonmetal contacts
  • 73.40.Gk
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Tunneling
  • YEAR: 1999

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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