Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
Statistical modeling of pulse height spectrum of gamma-ray spectrometers limited by incomplete charge collection
This letter presents an analytic approach to the calculation of the pulse height spectrum, using a statistical model, which simultaneously considers a random point of photon absorption (i.e., nonunifo...
Next Article
Erratum: "Evidence for relaxed and high-quality growth of GaN on SiC(0001)" [Appl. Phys. Lett. 74, 3308 (1999)]

Fabrication of metallic electrodes with nanometer separation by electromigration

Appl. Phys. Lett. 75, 301 (1999); doi:10.1063/1.124354

Issue Date: 12 July 1999

You are not logged in to this journal. Log in

Hongkun Park, Andrew K. L. Lim, and A. Paul Alivisatos
Department of Chemistry, University of California and Lawrence Berkeley National Laboratory, Berkeley, California 94720

Jiwoong Park and Paul L. McEuen
Department of Physics, University of California and Lawrence Berkeley National Laboratory, Berkeley, California 94720
A simple yet highly reproducible method to fabricate metallic electrodes with nanometer separation is presented. The fabrication is achieved by passing a large electrical current through a gold nanowire defined by electron-beam lithography and shadow evaporation. The current flow causes the electromigration of gold atoms and the eventual breakage of the nanowire. The breaking process yields two stable metallic electrodes separated by ~ 1 nm with high efficiency. These electrodes are ideally suited for electron-transport studies of chemically synthesized nanostructures, and their utility is demonstrated here by fabricating single-electron transistors based on colloidal cadmium selenide nanocrystals. ©1999 American Institute of Physics.
History: Received 11 March 1999; accepted 10 May 1999
Permalink: http://link.aip.org/link/?APPLAB/75/301/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (238 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 66.30.Qa
    Transport properties of condensed matter (nonelectronic) Diffusion in solids Electromigration
  • 85.40.Hp
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Lithography, masks and pattern transfer
  • 81.15.Ef
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Vacuum deposition
  • 68.55.Jk
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Structure and morphology; thickness
  • 85.40.Sz
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Deposition technology
  • YEAR: 1999

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (25)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. L. A. Bumm, J. J. Arnold, M. T. Cygan, T. D. Dunbar, T. P. Burgin, L. Jones II, D. L. Allara, J. M. Tour, and P. S. Weiss, Science 271, 1705 (1996).
  2. M. A. Reed, C. Zhou, C. J. Muller, T. P. Burgin, and J. M. Tour, Science 278, 252 (1997).
  3. D. Porath, Y. Levi, M. Tarabiah, and O. Millo, Phys. Rev. B 56, 9829 (1997).
  4. R. P. Andres, T. Bein, M. Dorogi, S. Feng, J. I. Henderson, C. P. Kubiak, W. Mahoney, R. G. Osifchin, and R. Refenberger, Science 272, 1323 (1996).
  5. D. L. Klein, R. Roth, A. K. L. Lim, A. P. Alivisatos, and P. L. McEuen, Nature (London) 389, 699 (1997).
  6. D. C. Ralph, C. T. Black, and M. Tinkham, Phys. Rev. Lett. 78, 4087 (1997).
  7. L. P. Kouwenhoven, G. Schön, and L. L. Sohn, Mesoscopic Electron Transport (Kluwer, Dordrecht, 1997).
  8. O. Kahn and C. J. Martinez, Science 279, 44 (1998).
  9. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
  10. H. Nejoh, Nature (London) 353, 641 (1991).
  11. C. Zhou, C. J. Muller, M. R. Deshpande, J. W. Sleight, and M. A. Reed, Appl. Phys. Lett. 67, 1160 (1995).
  12. D. L. Klein, P. L. McEuen, J. E. B. Katari, R. Roth, and A. P. Alivisatos, Appl. Phys. Lett. 68, 2574 (1996).
  13. T. Sato and H. Ahmed, Appl. Phys. Lett. 70, 2759 (1997).
  14. A. Bezryadin and C. Dekker, J. Vac. Sci. Technol. B 15, 793 (1997).
  15. T. Junno, S.-B. Carlsson, H. Xu, L. Montelius, and L. Samuelson, Appl. Phys. Lett. 72, 548 (1998).
  16. R. Desmicht, G. Faini, V. Cros, A. Fert, F. Petroff, and A. Vaurès, Appl. Phys. Lett. 72, 386 (1998).
  17. D. Davidovic and M. Tinkham, Appl. Phys. Lett. 73, 3959 (1998).
  18. A. F. Morpurgo, D. B. Robinson, and C. M. Marcus, Appl. Phys. Lett. 74, 2084 (1999).
  19. S. H. M. Persson, L. Olofsson, and L. Gunnarsson (private communications).
  20. T. P. Bigioni, L. E. Harrell, W. G. Cullen, D. K. Guthrie, R. L. Whetten, and P. N. First (private communications).
  21. P. S. Ho and T. Kwok, Rep. Prog. Phys. 52, 301 (1989).
  22. V. B. Fiks, Sov. Phys. Solid State 1, 14 (1959).
  23. R. S. Sorbello, Phys. Rev. B 39, 4984 (1989).
  24. C. B. Murray, D. J. Norris, and M. G. Bawendi, J. Am. Chem. Soc. 115, 8706 (1993).
  25. H. Park, A. K. L. Lim, A. P. Alivisatos, and P. L. McEuen (unpublished).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics