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GaAs nanostructures and films deposited by a Cu-vapor laser

Appl. Phys. Lett. 75, 2208 (1999); doi:10.1063/1.124966

Issue Date: 11 October 1999

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L. N. Dinh, S. Hayes, C. K. Saw, W. McLean II, and M. Balooch
Lawrence Livermore National Laboratory, Livermore, California 94551

J. A. Reimer
Lawrence Berkeley National Laboratory and Department of Chemical Engineering, University of California, Berkeley, California 94720
The properties of GaAs nanoclusters and films deposited on substrates by a Cu-vapor laser were investigated. Nanoclusters of GaAs were produced by laser ablating a GaAs target in an Ar background gas. X-ray diffraction and transmission electron microscopy revealed that these GaAs nanoclusters had randomly oriented crystalline cores and As-rich amorphous oxide outer shells. These clusters assembled, upon vacuum annealing, along step edges and at defects on substrates to form wire-like structures. Our results also showed that GaAs films, when deposited in vacuum, did not have crystalline cores and were rich in As. Postdeposition annealing in vacuum to between 400 and 500 °C drove off the excess As. The stoichiometry of the films was confirmed by both Auger electron spectroscopy and x-ray photoelectron spectroscopy. ©1999 American Institute of Physics.
History: Received 28 June 1999; accepted 13 August 1999
Permalink: http://link.aip.org/link/?APPLAB/75/2208/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Ea
    Materials science Specific materials: fabrication, treatment, testing and analysis III–V semiconductors
  • 81.05.Ys
    Materials science Specific materials: fabrication, treatment, testing and analysis Nanophase materials
  • 61.46.+w
    Structure of solids and liquids; crystallography Clusters, nanoparticles, and nanocrystalline materials
  • 81.15.Fg
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Laser deposition
  • 61.50.Nw
    Structure of solids and liquids; crystallography Crystalline state Crystal stoichiometry
  • YEAR: 1999

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (24)
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