Direct far-field observation of surface-plasmon propagation by photoinduced scattering
A tightly focused laser beam is shown to act as a scatterer of surface plasmons. The energy released into free space due to the scattering is collected by far-field optics. Scanning the laser beam ove...
A tightly focused laser beam is shown to act as a scatterer of surface plasmons. The energy released into free space due to the scattering is collected by far-field optics. Scanning the laser beam ove...
Polarization-independent four-wave mixing in a bidirectional traveling-wave semiconductor optical amplifier
In this work, we demonstrate polarization-independent four-wave mixing using a single semiconductor optical amplifier. The result is obtained using a polarization-diversity scheme, in which all the in...
In this work, we demonstrate polarization-independent four-wave mixing using a single semiconductor optical amplifier. The result is obtained using a polarization-diversity scheme, in which all the in...
Low-loss Al-free waveguides for unipolar semiconductor lasers
Appl. Phys. Lett. 75, 3911 (1999); doi:10.1063/1.125491
Issue Date: 20 December 1999
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A promising waveguide design for midinfrared (
= 5–20 µm) unipolar semiconductor lasers is proposed and demonstrated in (Al)GaAs quantum cascade structures. In the latter, the active region is embedded between two GaAs layers, with an appropriate doping profile which allows optical confinement, with low waveguide losses and optimal heat dissipation. Low internal cavity losses of 20 cm–1 have been measured using different techniques for lasers with emission wavelength at ~9 µm. At 77 K, these devices have peak output power in excess of 550 mW and threshold current of 4.7 kA/cm2. ©1999 American Institute of Physics.
= 5–20 µm) unipolar semiconductor lasers is proposed and demonstrated in (Al)GaAs quantum cascade structures. In the latter, the active region is embedded between two GaAs layers, with an appropriate doping profile which allows optical confinement, with low waveguide losses and optimal heat dissipation. Low internal cavity losses of 20 cm–1 have been measured using different techniques for lasers with emission wavelength at ~9 µm. At 77 K, these devices have peak output power in excess of 550 mW and threshold current of 4.7 kA/cm2. ©1999 American Institute of Physics.
| History: | Received 31 August 1999; accepted 25 October 1999 |
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http://link.aip.org/link/?APPLAB/75/3911/1 |
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Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
semiconductor lasers,
optical planar waveguides,
gallium arsenide,
III-V semiconductors,
optical losses,
integrated optics
- 42.55.Px
Optics Lasers Semiconductor lasers; laser diodes - 42.60.By
Optics Laser optical systems: design and operation Design of specific laser systems - 42.79.Gn
Optics Optical elements, devices, and systems Optical waveguides and couplers - 42.82.Et
Optics Integrated optics Waveguides, couplers, and arrays - YEAR: 1999
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (13)
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