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Current-phase relationship of YBa2Cu3O7–x ramp-edge Josephson junctions
The current-phase relation (CPR) of high-Tc ramp-edge Josephson junctions (YBa2Cu3O7–x/PrBa2Cu3O7/YBa2Cu3O7–x) was investigated experimentally in the temperature range 65<T<85 K. The i...

Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclusters

Appl. Phys. Lett. 76, 97 (2000); doi:10.1063/1.125668

Issue Date: 3 January 2000

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H. Akinaga, S. Miyanishi, and K. Tanaka
Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305-8562, Japan

W. Van Roy
JRCAT, Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan

K. Onodera
TOKIN corporation, 28-1 Hanashima-Shinden, Tsukuba, Ibaraki 305-0875, Japan
The giant magneto-optical effect of ferromagnetic MnAs nanoclusters embedded in GaAs is shown. The Faraday rotation angle at 0.98 µm reaches about 0.2°/µm at 2000 Oe. The potential of this magneto-optical material for use as a Faraday rotator operating at 0.98 µm is demonstrated by the Verdet constant of the film which is 16 times larger than that of (Cd,Mn,Hg)Te commercially developed for an optical isolator. The fabrication of this material is compatible with that of semiconductor-based devices. ©2000 American Institute of Physics.
History: Received 25 June 1999; accepted 9 November 1999
Permalink: http://link.aip.org/link/?APPLAB/76/97/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic properties and materials Studies of specific magnetic materials Magnetic semiconductors
  • 75.50.Tt
    Magnetic properties and materials Studies of specific magnetic materials Fine-particle systems
  • 78.20.Ls
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of bulk materials and thin films Magnetooptical effects
  • YEAR: 2000

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (19)
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  18. The device was provided by Tokin corporation.
  19. The absorption coefficient alpha in this letter is defined by I = I0 exp(–alphad), where d(µm) is the thickness of the film, and I and I0 are output and input light intensities, respectively. The insertion loss, L, can be written as L(dB) = 10 log10(I0/I) = (10/loge 10)alphad.

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