Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Investigation of polarization-pinning mechanism in deep-line-etched vertical-cavity surface-emitting lasers
Recently, it has been shown that the etching of deep trenches in close proximity to GaAs vertical-cavity surface-emitting laser (VCSEL) apertures causes the linearly polarized TE emission to be pinned...
Next Article
Doubling the frequency of depleted fundamental waves in periodically poled KTiOPO4
Frequency doubling of a diode-pumped Nd:YAG laser in 1 and 2 cm long periodically poled KTiOPO4 wafers has been investigated. Up to 60% doubling efficiency has been achieved. The good agreement obtain...

Solar-blind AlGaN photodiodes with very low cutoff wavelength

Appl. Phys. Lett. 76, 403 (2000); doi:10.1063/1.125768

Issue Date: 24 January 2000

You are not logged in to this journal. Log in

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
We report the fabrication and characterization of AlxGa1–xN photodiodes (x~0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for –5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. ©2000 American Institute of Physics.
History: Received 2 September 1999; accepted 23 November 1999
Permalink: http://link.aip.org/link/?APPLAB/76/403/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (38 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ey
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) III–V semiconductors
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures III–V semiconductors
  • 85.60.Dw
    Electronic and magnetic devices; microelectronics Optoelectronic devices Photodiodes; phototransistors; photoresistors
  • 81.15.Gh
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
  • YEAR: 2000

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (10)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Schreiber, T. Dang, G. Smith, T. Pickenpaugh, P. Gehred, and C. Litton, Proc. SPIE 3629, 230 (1999).
  2. M. P. Ulmer, M. Razeghi, and E. Bigan, Proc. SPIE 2397, 210 (1995).
  3. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
  4. E. Monroy, E. Muñoz, F. J. Sánchez, F. Calle, E. Calleja, B. Beaumont, P. Gibart, J. A. Muñoz, and F. Cussó, Semicond. Sci. Technol. 13, 1042 (1998).
  5. D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 72, 3303 (1998).
  6. S. Krishnankutty, W. Yang, T. Nohava, and P. Ruden, MRS Int. J. 3, (1998).
  7. X. Zhang, P. Kung, A. Saxler, D. Walker, T. C. Wang, and M. Razeghi, Appl. Phys. Lett. 67, 1745 (1995).
  8. P. Kung, X. Zhang, D. Walker, A. Saxler, and M. Razeghi, Proc. SPIE 3287, 214 (1998).
  9. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 74, 762 (1999).
  10. A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, and H. Temkin, Appl. Phys. Lett. 71, 2334 (1997).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics