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Two-photon photocurrent imaging of vertical cavity surface emitting lasers

Appl. Phys. Lett. 76, 1510 (2000); doi:10.1063/1.126079

Issue Date: 20 March 2000

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Chris Xu, Leo M. F. Chirovsky, W. S. Hobson, J. Lopata, Wayne H. Knox, John E. Cunningham, William Y. Jan, and L. A. D'Asaro
Bell Laboratories, Lucent Technologies, Holmdel, New Jersey 07733
We show that two-photon photocurrent imaging can be used to nondestructively study vertical cavity surface emitting lasers on a microscopic level. In particular, we study the aperture isolation created by shallow ion implantation. The combination of two-photon backside imaging and a probe station is ideal for internal and full wafer characterization. The required peak and average power levels for testing can be easily satisfied by available compact ultrafast laser sources, making the technique practical and user friendly. ©2000 American Institute of Physics.
History: Received 22 November 1999; accepted 25 January 2000
Permalink: http://link.aip.org/link/?APPLAB/76/1510/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Optics Lasers Semiconductor lasers; laser diodes
  • 42.60.Da
    Optics Laser optical systems: design and operation Resonators, cavities, amplifiers, arrays, and rings
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures III–V semiconductors
  • 61.72.Vv
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Doping and impurity implantation in III–V and II–VI semiconductors
  • 68.55.Ln
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Defects and impurities: doping, implantation, distribution, concentration, etc.
  • 85.40.Ry
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Impurity doping, diffusion and ion implantation technology
  • 79.60.Dp
    Electron and ion emission by liquids and solids; impact phenomena Photoemission and photoelectron spectra Adsorbed layers and thin films
  • 79.60.Bm
    Electron and ion emission by liquids and solids; impact phenomena Photoemission and photoelectron spectra Clean metal, semiconductor, and insulator surfaces
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (8)
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  1. T. E. Sale, Vertical Cavity Surface Emitting Lasers (Wiley, New York, 1995).
  2. T. P. Lee, Current Trends in Vertical Cavity Surface Emitting Lasers (Word Scientific, Singapore, 1995).
  3. C. Wilmsen, H. Temkin, and L. A. Coldren, Vertical-Cavity Surface-Emitting Lasers (Cambridge University Press, New York, 1999).
  4. D. C. D'Avanzo, IEEE Trans. Electron Devices ED–29, 1051 (1982).
  5. Y. H. Lee, B. Tell, K. Brown-Goebeler, J. L. Jewell, and J. V. Hove, Electron. Lett. 26, 710 (1990).
  6. L. M. F. Chirovsky, W. S. Hobson, R. E. Leibenguth, S. P. Hui, J. Lopata, G. J. Zydzik, G. Giaretta, K. W. Goossen, J. D. Wynn, A. V. Krishnamoorthy, B. J. Tseng, J. M. Vandenberg, and L. A. D'Asaro, IEEE Photonics Technol. Lett. 11, 500 (1999).
  7. C. Xu and W. Denk, Appl. Phys. Lett. 71, 2578 (1997).
  8. C. Xu and W. Denk, J. Appl. Phys. 86, 2226 (1999).

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