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Magnetoresistance in n- and p-type Ag2Te: Mechanisms and applications
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Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Appl. Phys. Lett. 76, 1713 (2000); doi:10.1063/1.126167

Issue Date: 27 March 2000

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G. Y. Chung, C. C. Tin, and J. R. Williams
Physics Department, Auburn University, Auburn, Alabama 36849

K. McDonald, M. Di Ventra, S. T. Pantelides, and L. C. Feldman
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235

R. A. Weller
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235
Results of capacitance–voltage measurements are reported for metal–oxide–semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide–semiconductor interface. ©2000 American Institute of Physics.
History: Received 23 November 1999; accepted 1 February 2000
Permalink: http://link.aip.org/link/?APPLAB/76/1713/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.20.Hb
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Impurity and defect levels; energy states of adsorbed species
  • 73.40.Qv
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metal–insulator–semiconductor structures (including semiconductor-to-insulator)
  • 84.32.Tt
    Electronics; radiowave and microwave technology; direct energy conversion and storage Passive circuit components Capacitors
  • 81.05.Hd
    Materials science Specific materials: fabrication, treatment, testing and analysis Other semiconductors
  • 61.72.Cc
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Kinetics of defect formation and annealing
  • 71.20.Nr
    Electronic structure Electron density of states and band structure of crystalline solids Semiconductor compounds
  • 73.20.At
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Surface states, band structure, electron density of states
  • 81.65.Rv
    Materials science Surface treatments Passivation
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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