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Low-energy electron-beam patterning of amine-functionalized self-assembled monolayers

Appl. Phys. Lett. 76, 2466 (2000); doi:10.1063/1.126378

Issue Date: 24 April 2000

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C. K. Harnett, K. M. Satyalakshmi, and H. G. Craighead
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
Patterned amine-functionalized self-assembled monolayers have potential as a template for the deposition and patterning of a wide variety of materials on silicon surfaces, including biomolecules. Results are presented here for low-energy electron-beam patterning of 2-aminopropyltriethoxysilane and (aminoethylaminomethyl)phenethyltrimethoxysilane self-assembled monolayers on silicon substrates. On these ultrathin (1–2 nm) monolayers, lower electron beam energies (<5 keV) produce higher resolution patterns than high-energy beams. Auger electron spectroscopy indicates that low-energy electron exposure primarily damages the amine groups. At 1 keV, a dose of 40 µC/cm2 is required to make the patterns observable by lateral force microscopy. Features as small as 80 nm were exposed at 2 keV on these monolayers. After exposure, palladium colloids and aldehyde- and protein-coated polystyrene fluorescent spheres adhered only to unexposed areas of the monolayers. ©2000 American Institute of Physics.
History: Received 18 January 2000; accepted 29 February 2000
Permalink: http://link.aip.org/link/?APPLAB/76/2466/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.18.+p
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Langmuir–Blodgett films
  • 85.40.Hp
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Lithography, masks and pattern transfer
  • 79.20.Fv
    Electron and ion emission by liquids and solids; impact phenomena Impact phenomena (including electron spectra and sputtering) Electron impact: Auger emission
  • YEAR: 2000

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ISSN:
0003-6951 (print)   1077-3118 (online)
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