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Using infrared picosecond pulses to probe the intersubband absorption of GaAs/AlGaAs quantum-well lasers following their optical excitation, we directly measure the dynamics of carriers in these devic...
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We report on an investigation of the optical gain in undoped and Si-doped metal-organic vapor phase epitaxially grown GaN. For carrier densities around the Mott transition (at approximately 8×10...

High duty cycle and continuous terahertz emission from germanium

Appl. Phys. Lett. 76, 2991 (2000); doi:10.1063/1.126555

Issue Date: 22 May 2000

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Erik Bründermann
Ruhr-University Bochum, Physical Chemistry II-NC 7/68, D-44780 Bochum, Germany

Danielle R. Chamberlin and Eugene E. Haller
Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720
We measured laser emission from Be-doped Ge crystals with intercontact distances as small as 0.5 mm. An improved heat sink allowed a twofold increase of the laser duty cycle to 5%. We also report the measurements of THz emission from small Be-doped Ge crystals under continuous excitation with volumes as small as 0.5 mm3. ©2000 American Institute of Physics.
History: Received 23 February 2000; accepted 28 March 2000
Permalink: http://link.aip.org/link/?APPLAB/76/2991/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Optics Lasers Semiconductor lasers; laser diodes
  • 42.60.By
    Optics Laser optical systems: design and operation Design of specific laser systems
  • YEAR: 2000

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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