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Nature of the fundamental band gap in GaNxP1–x alloys

Appl. Phys. Lett. 76, 3251 (2000); doi:10.1063/1.126597

Issue Date: 29 May 2000

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W. Shan, W. Walukiewicz, K. M. Yu, J. Wu, and J. W. Ager III
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

E. E. Haller
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California
Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720

H. P. Xin and C. W. Tu
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093
The optical properties of GaNxP1–x alloys (0.007<=x<=0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1–x at energy below the indirect GammaV–XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaNxP1–x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Gamma conduction-band minimum. ©2000 American Institute of Physics.
History: Received 21 December 1999; accepted 31 March 2000
Permalink: http://link.aip.org/link/?APPLAB/76/3251/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures III–V semiconductors
  • 81.15.Hi
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy
  • 73.20.At
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Surface states, band structure, electron density of states
  • YEAR: 2000

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (17)
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