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Magnetoresistive tunnel junctions deposited on laterally modulated substrates

Appl. Phys. Lett. 76, 3286 (2000); doi:10.1063/1.126608

Issue Date: 29 May 2000

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F. Montaigne
Unité Mixte de Physique CNRS-Thomson, LCR, Domaine de Corbeville, 91404 Orsay, France

P. Gogol
Laboratoire de Physique des Solides, bât. 510, Université Paris-Sud, 91405 Orsay, France

J. Briatico, J. L. Maurice, F. Nguyen Van Dau, F. Petroff, A. Fert, and A. Schuhl
Unité Mixte de Physique CNRS-Thomson, LCR, Domaine de Corbeville, 91404 Orsay, France
Co/Al2O3/NiFe tunnel junctions were deposited on misoriented silicon substrates. A thermal treatment activates a step bunching mechanism on the silicon surface leading to a modulated topology with a nanometric lateral period. The bottom magnetic electrode and the barrier follow this topology. Such junctions present good magnetotransport characteristics with a magnetoresistance about 14% at room temperature. Due to the uniaxial anisotropy induced by the topological modulation, the antiparallel configuration of the magnetization is well defined leading to perfect square magnetoresistance cycles at all temperatures. The magnetic behavior of patterned junctions has been investigated by transport measurements and Kerr microscopy. More than inducing a strong uniaxial anisotropy, the modulated topology is shown to strongly influence the switching mechanism of the magnetization. ©2000 American Institute of Physics.
History: Received 18 January 2000; accepted 6 April 2000
Permalink: http://link.aip.org/link/?APPLAB/76/3286/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.70.Cn
    Magnetic properties and materials Magnetic films and multilayers Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)
  • 72.15.Gd
    Electronic transport in condensed matter Electronic conduction in metals and alloys Galvanomagnetic and other magnetotransport effects
  • 75.45.+j
    Magnetic properties and materials Macroscopic quantum phenomena in magnetic systems
  • 73.40.Rw
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metal–insulator–metal structures
  • 75.50.Bb
    Magnetic properties and materials Studies of specific magnetic materials Fe and its alloys
  • 75.50.Cc
    Magnetic properties and materials Studies of specific magnetic materials Other ferromagnetic metals and alloys
  • 75.30.Gw
    Magnetic properties and materials Intrinsic properties of magnetically ordered materials Magnetic anisotropy
  • 78.20.Ls
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of bulk materials and thin films Magnetooptical effects
  • 75.60.Ej
    Magnetic properties and materials Domain effects, magnetization curves, and hysteresis Magnetization curves, hysteresis, Barkhausen and related effects
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (16)
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