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From N isoelectronic impurities to N-induced bands in the GaNxAs1–x alloy

Appl. Phys. Lett. 76, 3439 (2000); doi:10.1063/1.126671

Issue Date: 5 June 2000

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P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, and W. Stolz
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany

P. M. A. Vicente and J. Camassel
GES, Université Montpellier II, Case Courier 074, F-34095 Montpellier Cedex 5, France
GaNxAs1–x samples with x<3% grown by metalorganic vapor phase epitaxy were studied by low-temperature photoluminescence under hydrostatic pressure and photomodulated reflectance spectroscopy. The transformation from N acting as an isoelectronic impurity to N-induced band formation takes place at x[approximate]0.2%. The N level does not shift with respect to the valence band edge of GaNxAs1–x. Concentration as well as hydrostatic-pressure dependence of the GaNxAs1–x bands can be described by a three band kp description of the conduction band state E– and E+ and the valence band at k = 0. The model parameters for T<20 and T = 300 K were determined by fitting the model to the experimental data. Modeling the linewidth of the E– transition by combining the kp model and ion statistics leads to the conclusion that the electron-hole pairs are strongly localized. ©2000 American Institute of Physics.
History: Received 9 February 2000; accepted 11 April 2000
Permalink: http://link.aip.org/link/?APPLAB/76/3439/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.55.Eq
    Electronic structure Impurity and defect levels III–V semiconductors
  • 78.55.Cr
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Photoluminescence III–V semiconductors
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures III–V semiconductors
  • 71.20.Nr
    Electronic structure Electron density of states and band structure of crystalline solids Semiconductor compounds
  • YEAR: 2000

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (19)
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