Focused-ion-beam writing of electrical connections into platinum oxide films
A focused Ga+ ion-beam (FIB) writing system has been used to directly change an insulating platinum oxide film into a conducting film with a dose in the order of 1014 Ga + /cm2 at 30 keV ion energy. T...
A focused Ga+ ion-beam (FIB) writing system has been used to directly change an insulating platinum oxide film into a conducting film with a dose in the order of 1014 Ga + /cm2 at 30 keV ion energy. T...
Low resistance Ti/Pt/Au ohmic contacts to p-type GaN
Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm–3) are reported. Linear current–voltage characteristics were observed aft...
Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm–3) are reported. Linear current–voltage characteristics were observed aft...
The benzene molecule as a molecular resonant-tunneling transistor
Appl. Phys. Lett. 76, 3448 (2000); doi:10.1063/1.126673
Issue Date: 5 June 2000
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Experiments and theory have so far demonstrated that single molecules can form the core of a two-terminal device. Here we report first-principles calculations of transport through a benzene-1, 4-dithiolate molecule with a third capacitive terminal (gate). We find that the resistance of the molecule rises from its zero-gate-bias value to a value roughly equal to the quantum of resistance (12.9 k
) when resonant tunneling through the 
* antibonding orbitals occurs. ©2000 American Institute of Physics.
) when resonant tunneling through the * antibonding orbitals occurs. ©2000 American Institute of Physics.
| History: | Received 3 February 2000; accepted 11 April 2000 |
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