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Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
The incorporation of nitrogen in the low percentage range is investigated in a different III–V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency p...
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Molecular beam epitaxial growth of atomically smooth scandium nitride films

Appl. Phys. Lett. 77, 2485 (2000); doi:10.1063/1.1318227

Issue Date: 16 October 2000

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Hamad Al-Brithen and Arthur R. Smith
Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701
High quality scandium nitride films have been grown on magnesium oxide (001) substrates by molecular beam epitaxy using a rf plasma source for nitrogen. Both reflection high energy electron diffraction and x-ray diffraction confirm that these films have (001)-orientation. Atomic force microscopy reveals a surface morphology consisting of large plateaus and pyramids. The plateaus are found to be atomically smooth and have a 1×1 surface structure, as revealed by in situ scanning tunneling microscopy. ©2000 American Institute of Physics.
History: Received 31 May 2000; accepted 24 August 2000
Permalink: http://link.aip.org/link/?APPLAB/77/2485/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Hi
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy
  • 81.05.Ea
    Materials science Specific materials: fabrication, treatment, testing and analysis III–V semiconductors
  • 68.55.-a
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
  • 68.35.Bs
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solid–solid interfaces Surface structure and topography
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (12)
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