Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each ot...
Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each ot...
Variable frequency photoconductive grating method
The theoretical treatment of the steady-state photocarrier grating method is extended to include the frequency dependence of the chopping frequency, . It is shown that measurements of the characterist...
The theoretical treatment of the steady-state photocarrier grating method is extended to include the frequency dependence of the chopping frequency, . It is shown that measurements of the characterist...
Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures
Appl. Phys. Lett. 77, 2560 (2000); doi:10.1063/1.1318229
Issue Date: 16 October 2000
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We report the confirmed occurrence of Fowler–Nordheim hole tunneling in p-4H–SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m–0.52m, where m is the free electron mass. ©2000 American Institute of Physics.
| History: | Received 15 June 2000; accepted 19 August 2000 |
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KEYWORDS and PACS
silicon compounds,
MOS capacitors,
MIS structures,
semiconductor device reliability,
semiconductor device breakdown,
tunnelling,
interface states,
effective mass,
wide band gap semiconductors
- 73.40.Qv
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metal–insulator–semiconductor structures (including semiconductor-to-insulator) - 73.40.Gk
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Tunneling - 73.20.-r
Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states - 85.30.Tv
Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices - 71.18.+y
Electronic structure Fermi surface: calculations and measurements; effective mass, g factor - YEAR: 2000
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PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (14)
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