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Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs

Appl. Phys. Lett. 77, 3021 (2000); doi:10.1063/1.1322633

Issue Date: 6 November 2000

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I. Suemune and K. Uesugi
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan

W. Walukiewicz
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
We have observed a significant reduction in the temperature dependence of the absorption-edge energy in GaNxAs1–x alloys with x<0.04. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption-edge energy. We also compare the parameters that determine the temperature dependence of the band-gap energies in GaNAs and GaInNAs alloys. ©2000 American Institute of Physics.
History: Received 19 June 2000; accepted 6 September 2000
Permalink: http://link.aip.org/link/?APPLAB/77/3021/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.20.Nr
    Electronic structure Electron density of states and band structure of crystalline solids Semiconductor compounds
  • YEAR: 2000

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (18)
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