Electrochemical carbon nanotube field-effect transistor
Appl. Phys. Lett. 78, 1291 (2001); doi:10.1063/1.1350427
Issue Date: 26 February 2001
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We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |EF|
0.30.5 eV, corresponding to a doping level of
1013 cm2. Hole-doping increases in the electrolyte. ©2001 American Institute of Physics.
0.30.5 eV, corresponding to a doping level of
1013 cm2. Hole-doping increases in the electrolyte. ©2001 American Institute of Physics.
| History: | Received 18 September 2000; accepted 27 December 2000 |
| Permalink: |
http://link.aip.org/link/?APPLAB/78/1291/1 |
KEYWORDS and PACS
- 73.63.Fg
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in mesoscopic or nanoscale materials and structures Nanotubes - 81.07.De
Materials science Nanoscale materials and structures: fabrication and characterization Nanotubes - 85.35.Kt
Electronic and magnetic devices; microelectronics Nanoelectronic devices Nanotube devices - 85.65.+h
Electronic and magnetic devices; microelectronics Molecular electronic devices - 82.45.Fk
Physical chemistry and chemical physics Electrochemistry and electrophoresis Electrode kinetics - 85.30.Tv
Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices - YEAR: 2001
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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